This work presents a novel multilevel programming scheme based on gradual crystallization from weak reset, which improves the programming precision.

Results are validated by matrix-vector multiplication (MVM) on a 20 kb test chip, showing excellent accuracy even after annealing up to 1 day at 180 °C.

Apr 17, 2024 · Ge-rich GST is affected by drift on both set and reset states which limits the stability of a multilevel cell and the accuracy of in-memory ...

Sep 8, 2024 · Phase change memory (PCM) has been proven to have unique advantages in embedded applications, mass storage, and in-memory computing areas. To ...

A system-level MNIST classification task simulation confirms the effectiveness of our drift compensation, reducing drift by 50.58 ± 6.10% and variability by 5%, ...

Oct 29, 2024 · In this paper, a combined hardware and software solution to mitigate the impact of PCM non-idealities is presented. The drift of PCM cells ...

Drift compensation in multilevel PCM for in-memory computing accelerators · Devices and materials for in-memory computing: challenges and opportunities.

Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators. L Pistolesi, A Glukhov, A de Gracia Herranz, M Lopez-Vallejo, M Carissimi ...

The drift of PCM cells conductance is compensated at the circuit level through the introduction of a conductance ratio at the core of the MVM computation. A ...

Aug 7, 2024 · As drift plays a primary role in narrowing the accuracy of PCM- based hardware accelerators [24], different approaches have been proposed to ...