A combined experimental/simulation analysis has been performed to study the gate reliability of GaN-HEMTs with p-type gate under pulse stress conditions.

PDF | On Mar 1, 2022, M. Millesimo and others published Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition | Find, read and cite all the ...

Abstract—A combined experimental/simulation analysis has been performed to study the gate reliability of GaN-HEMTs with p-type gate under pulse stress ...

Mar 27, 2022 · A combined experimental/simulation analysis has been performed to study the gate reliability of GaN-HEMTs with p-type gate under pulse ...

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition ; dc.contributor.author, Fiegna, C. ; dc.contributor.author, Tallarico, A. N. ; dc.date.

This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing.

Apr 26, 2023 · GaN HEMTs working under high power stress often suffer fatal failures. However, for the traditional thick gate metal, it is difficult to ...

Mar 28, 2021 · On-demand video platform giving you access to lectures from conferences worldwide.

Lowering the Al% of the barrier and the Mg concentration of the p-GaN layer leads to a longer gate lifetime, while an optimum AlGaN barrier thickness is ...

In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, ...