The Gate Side Injection operating mode (GSI) is confirmed as a very efficient way to boost the program operation in 3D NAND Flash stacks, because of its conventional ISPP slope larger than the theoretical limit of 1.
We optimize the gate stack towards improved programming characteristics as required for 3D-NAND scaling, while ensuring erase capability and good retention.
Sep 6, 2024 · This new scheme relies on charge injection from the gate electrode by reversing the order of the dielectric layers in the stack.
May 28, 2024 · The tunneling mechanisms are better for uniform charging and discharging and low-power applications. This paper describes Fowler-Nordheim ...
Sep 6, 2024 · *R&D: Gate Side Injection Operating Mode for 3D NAND Flash Memories* ift.tt/NUzyb4v. Submitted September 06, 2024 at 02:37PM by NewMaxx via ...
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Oct 22, 2022 · In this paper, we will review a device operation algorithms and techniques to improve the cell characteristics and reliability.
Oct 22, 2024 · The cell-to-cell interference is enhanced by the effective gate length modulation due to the no-lightly doped drain (LDD) string architecture.
A block is a unit of the erase operation. As shown in Figure 3, there are two types of erase methods in 3D NAND—the body erase (Figure 3a) and the GIDL erase ( ...
Instead of using a traditional floating gate, 3D NAND uses charge trap technology. Based on silicon nitride films, charge-trap stores the charge on opposite ...
Mar 7, 2023 · Our report is conducive to optimizing the performance of 3D NAND flash memory based on an nc-Si floating gate, which will be better used in the ...