We propose new test device structures, gate-last-formed structures, which are suitable for fundamental study of high-k gate insulator or metal gate ...

Missing: MOSFET MOSFETs.

Aug 7, 2017 · The gate electrode of the fabricated devices is in- situ doped polycrystalline Silicon. The devices are electrically characterized through I-V ...

Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference counterparts with silicon dioxide gate.

In this work, representative high-k/metal gate MOS-capacitor stacks were fabricated in both gate first and replacement gate integration schemes.

Using the small-signal equivalent circuit of the MOS transistor, the gate resistance can be extracted from the two-port Y-parameters using the formula R g = R e ...

This paper has reviewed the materials chemistry, bonding and electrical behaviour of oxides needed to replace SiO 2 as the gate oxide in CMOS devices.

Apr 23, 2024 · This paper proposes and investigates a novel 4H-SiC trench MOSFET (TMOS) with integrated high-K deep trench and gate dielectric (INHK-TMOS).

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Sep 3, 2021 · This is explained by assuming that there is a large number of hydrogenous species within the metal gate or at its interface with gate dielectric ...