Jul 22, 2022 · Interfacial-Layer Design for Hf 1-x Zr x O 2 -Based FTJ Devices: From Atom to Array. Abstract: For the first time, we demonstrate Ferroelectric ...
In this paper, we present a comprehensive study for the IL design and demonstrate FTJs with high endurance and surpassing on-off ratio for non-volatile memory ( ...
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We propose a new scheme for strong two-photon nonlinearity (TPN) by cavity QED systems with many three-level atoms, although the TPN due to the saturation ...
Missing: xZrxO2- | Show results with:xZrxO2-
Array-level ... Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array ... interfacial layer (IL) into the FTJs. Compared ...
Oct 7, 2024 · 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) ... Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array.
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array. 2022. H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, K.-Y. Hsiang, C.
Chang, T.C. Chen, “Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array,” 2022 Symposium on VLSI Technology (VLSI Symp.), pp. 361 ...
Mar 8, 2023 · Chen, “Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array,” accepted by Symposium on VLSI Technology and Circuits ...
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array. ... PPAC of sheet-based CFET configurations for 4 track design with 16nm metal ...