Jan 10, 2018 · This study is focused on the experimental investigation of noise at microwave frequencies forscaled gallium arsenide high-electron-mobility ...
Abstract: This study is focused on the experimental investigation of noise at microwave frequencies for scaled gallium arsenide high-electron-mobility ...
Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's. View Fulltext. IET Research Hub logo. Author(s): Alina Caddemi 1 ...
This work presents an experimental investigation and relevant discussion of the link existing between noise parameters and light exposure of GaAs ...
Oct 22, 2024 · PDF | This article presents the experimental results of the modeling of noise parameters for a GaAs HEMT under light exposure.
This paper presents an experimental investigation on the microwave performance of a GaN HEMT subject to UV light exposure. The device, having 0.25 μm gate ...
This letter presents valuable remarks based on an extensive experimental study of the microwave behavior for a GaAs HEMT under CW infrared and visible laser ...
Microwave noise parameter modeling of a GaAs HEMT under ...
www.semanticscholar.org › paper › Micr...
This article presents the experimental results of the modeling of noise parameters for a GaAs HEMT under light exposure. The noise model is based on the ...
This study is focused on the experimental investigation of noise at microwave frequencies for scaled gallium arsenide high-electron-mobility transistor's ( ...
Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's · A. CaddemiE. CardilloG. Crupi. Physics, Engineering. IET ...