It can be applied for predicting bulk- or partially depleted (PD) SOI CMOS circuit operation. Analytical expressions derived for the logic switching threshold ...

Abstract—A simple, yet realistic physics-based model is introduced to describe the subthreshold drain current of a MOSFET taking into account.

A simple, yet realistic physics-based model is introduced to describe the subthreshold drain current of a MOSFET taking into account the body- and ...

It can be applied for predicting bulk- or partially depleted (PD) SOI CMOS circuit operation. Analytical expressions derived for the logic switching threshold ...

It can be applied for predicting bulk-or partially depleted (PD) SOI CMOS circuit operation. Analytical expressions derived for the logic switching threshold ...

For our 45-nm SOI technology, the device subthreshold current IOF F is an exponential function of the channel length LP , the supply voltage VDD, and the.

Modeling subthreshold SOI logic for static timing analysis. A simple, yet realistic physics-based model is introduced to describe the subthreshold drain ...

Aug 2, 2014 · Meanwhile, the frame- work conducts static timing analysis (STA) to ensure that the dual-threshold voltage design is able to run at the fastest ...

We present a comparative study between MOSBULK and MOSSOI obtained by superposing a MOS, an NPN and a capacitor. The BSIM3V3 model in PSPICE was used.

Valentian et al., ―Modeling Subthreshold SOI Logic for Static Timing Analysis‖, In IEEE Trans. on. VLSI Systems, Vol. 12, No. 6, 2004, pp. 662-668. [17] T ...