Dynamic RAM (DRAM) data-line interface noise generated during amplification, the key problem in designing 16 Mbit and higher DRAMs, is investigated.
Dynamic RAM (DRAM) data-line interface noise generated during amplification, the key problem in designing 16 Mbit and higher DRAMs, is investigated.
New DRAM noise generation under half Vcc precharge and its reduction using a transposed amplifier · S. Ienaga, M. Aoki, +4 authors. K. Itoh · Published in ...
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New DRAM noise generation under half-V/sub cc/ precharge and its reduction using a transposed amplifier · Engineering, Physics · 1989.
New DRAM Noise Generation Under Half-VccPrecharge and its Reduction Using a Transposed Amplifier. Article. Sep 1989. S. Ikenaga · Masakazu Aoki · Yoshinobu ...
1989: New DRAM noise generation under half-V/sub cc/ precharge and its reduction using a transposed amplifier IEEE Journal of Solid-State Circuits 24(4): 889- ...
A new multiple twisted data line technique to reduce both bit-line and word-line coupling noises is proposed and demonstrated. An improved noise/signal ...
Aug 10, 1990 · Itoh, "New DRAM noise generation under half-vcc precharge and its reduction using a transposed amplifier," IEEE Journal of Solid State Circuits,.
The new approach is based on the introduction of a number of fault analysis algorithms that enable the application of electrical. Spice simulations to develop ...
