This paper provides statistical analysis on real data taken from state-of-the-art MLC NAND flash memory cells. The analysis allows separation of different ...
This paper provides statistical analysis on real data taken from state-of-the-art MLC NAND flash memory cells that allows separation of different sources ...
Abstract—This paper provides statistical analysis on real data taken from state-of-the-art MLC NAND flash memory cells. The analysis allows separation of ...
Bibliographic details on Noise and interference characterization for MLC flash memories.
Our characterization shows that how much a cell is affected by the program interference it receives depends on three factors: i) the location of the programmed ...
Flash Memory: Characterization, Analysis, and Modeling”,. DATE 2013. Cai et al ... ▫ Program interference noise follows multi-modal Gaussian-mixture.
We conclude that read errors also demonstrate value dependence, but their overall rate is relatively low compared to retention and program interference errors.
The results presented here can be used to construct a channel model with data-dependent noise and interference characteristics, which in turn can be utilized in ...
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However, as its capacity increases, flash memory suffers from different types of circuit- level noise, which greatly impact its reliability. These include.
We discuss how the optimal read voltage thresholds can be determined and assess the benefit of cancelling cell-to-cell interference in terms of cycling ...