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The proposed cell gives faster read and writes with an improvement of 68.5% and 89.2% over conventional 6T SRAM cell. In standby mode, about 62.2% leakage power ...
A controller circuit is introduced which is separately controlling the load, driver and access transistors of SRAM cell and optimal body bias voltage is ...
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ABSTRACT. In this paper a new SRAM cell is designed with a body bias controller to control leakage, speed and stability. A novel.
The proposed cell gives faster read and writes with an improvement of 68.5% and 89.2% over conventional 6T SRAM cell. In standby mode, about 62.2% leakage power ...
In this paper a new SRAM cell is designed with a body bias controller to control leakage, speed and stability. A novel controller circuit is proposed to ...
A dynamic threshold voltage control strategy is presented in this paper to minimize leakage power while enhancing the speed and stability.
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Discover effective techniques for reducing leakage power in modern nano-scale CMOS memory devices. Explore biasing, power gating, and multi-threshold ...
In this paper a new SRAM cell is designed with a body bias controller to control leakage, speed and stability. A novel controller circuit is proposed to control ...
Missing: Optimal | Show results with:Optimal
Dual threshold voltage with a forward body bias technique can reduce the leakage current through gate and total power [7].
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A. Dynamic SRAM PMOS FBB (Forward Body Bias). An effective approach to help to reduce the leakage power involves dynamically changing the body bias of.
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