We show that mobility performance and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si ...
Process dependence of BTI reliability in advanced HK MG stacks
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Bias temperature instabilities (BTI) reliability is investigated in advanced dielectric stacks. We show that mobility performance and NBTI reliability are ...
We show that mobility performance and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si ...
A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks.
In this work, we investigate the BTI reliability and time-dependent variability of these novel devices and compare them to FinFETs with similar gate-stack ...
It is well known that n-MOSFET aging under AC and DC Positive Bias Temperature Instability (PBTI) is strongly dependent on the adopted HK stack processes.
EOT scaling is feasible only if scaled gate stacks show good gate leakage and mobility, as well as gate oxide reliability. To achieve desired reliability, ...
Processing conditions were optimized to achieve. BTI degradation on HK+MG that is comparable or better than with. SiON dielectrics at 15% to 50% higher E-fields ...
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In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is ...
Process dependence of BTI reliability in advanced HK MG stacks. Autores: X. Garros, M. Casse, M. Rafik, C. Fenouillet-Béranger, G. Reimbold, Fernando Martín ...