We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is implemented ...

Abstract— We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is ...

Jul 18, 2024 · We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model ...

The surface-potential-based model is implemented without iterative loops, and includes physical modeling of the moderate inversion region and all ...

C.C.: SP-SOI: a third generation surface potential based compact SOI MOSFET model. In: Proc. IEEE Custom Integr. Circuits Conf., pp. 819–822 (2005). 70. Wu ...

SP-SOI: a third generation surface potential based compact SOI MOSFET model ; Q1. IEEE. SP: an advanced surface-potential-based compact MOSFET model ; Q2. IEEE.

This chapter discusses two advanced SOI models—PSP- SOI-PD for partially depleted devices and PSP-SOI-DD including the dynamic de- pletion effects including ...

SP-SOI: a third generation surface potential based compact SOI MOSFET Model. W. Wu, X. Li, H. Wang, G. Gildenblat, G. Workman, S. Veeraraghavan, and C ...

This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated ...

This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, ...