Single, high-energy ions can induce large charge loss from floating gates used as basic storage elements in nonvolatile memory cells.

Single, high-energy ions can induce large charge loss from Floating Gates used as basic storage elements in nonvolatile memory cells. The charge loss greatly ...

Single, high-energy ions can induce large charge loss from floating gates used as basic storage elements in nonvolatile memory cells.

Single, high-energy ions can induce large charge loss from Floating Gates used as basic storage elements in nonvolatile memory cells.

A FG error occurs when a scattered ionizing particle induces a threshold voltage shift large enough to cause a cell to cross the boundaries between different ...

A programmed Floating Gate (FG) hit by a heavy ion experiences a large charge loss, which degrades the stored information.

Soft errors due to neutrons and alpha particles are among the main threats for the reliability of digital circuits operating at terrestrial level.

In addition to the soft errors in FG cells induced by heavy ion irradiation, the reliability of flash memory after being irradiated has aroused the interest of ...

We study the sensitivity to alpha particles of state-of-the-art Multi-Level Cell (MLC) and Single-Level Cell (SLC) NAND Floating Gate (FG) flash memories ...

This work describes 129 Xe and 209 Bi ions induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory. Only 0 to 1 transition error has been ...