May 14, 2024 · A vertical-transport (VT) FeFET that flips the charge transport channel perpendicular to the substrate plane is proposed, in which a ferroelectric gate and a ...
May 14, 2024 · These findings suggest that the proposed VT-FeFET could offer a new solution for future non-volatile memories as well as more advanced.
May 14, 2024 · These findings suggest that the proposed VT-FeFET could offer a new solution for future non-volatile memories as well as more advanced.
... memory components. The transistor-type solid-state non-volatile memories, such as ferroelectric field-effect transistors (FeFETs), have long been regarded ...
May 31, 2024 · The transistor-type solid-state non-volatile memories, such as ferroelectric field-effect transistors (FeFETs), have long been regarded as a ...
The proposed VT-FeFET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An ...
其它, 期刊：Science China Information Sciences 作者：Qiyu Yang; Zheng‐Dong Luo; Fei Xiao; Junpeng Zhang; Dawei Zhang; et al 出版日期：2024-05-14 ; 求助人.
Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors ... Authors: Qiyu Yang; Zheng-Dong ...
The proposed VT-FeFET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An ...
Feb 17, 2021 · The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory