Oct 21, 2014 · Abstract: A fast statistical method for the analysis of the Read SNM of a 6 T SRAM cell in near/subthreshold region is proposed.
Abstract—A fast statistical method for the analysis of the Read. SNM of a 6 T SRAM cell in near/subthreshold region is proposed.
This method uses the state space equation to derive the Read SNM of the cell as a function of threshold voltage of cell transistors, which provides a fast ...
A fast statistical method for the analysis of the Read SNM of a 6 T SRAM cell in near/subthreshold region is proposed. The method is based on the nonlinear ...
The simulation results show that the proposed 9T cell achieves 1.14× and 1.77× larger read static noise margin (RSNM) as compared to ST-2 and conventional 6T ...
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Apr 17, 2023 · This paper analyzes the methods for calculating noise margin of conventional 6 transistor (6 T) and 8 transistor (8 T) SRAM cell.
Missing: Statistical | Show results with:Statistical
This paper evaluates the static noise margin (SNM) of 6T. SRAM bitcells operating in sub-threshold. We analyze the dependence of SNM during both hold and ...
An ultra-low voltage performance of nanowire-transistors-based SRAM cell is investigated using the SPICE model parameters extracted from measurement data.
Missing: Statistical Near/
This paper analyzes SNM for sub-threshold bitcells in a 65-nm process for its dependency on sizing, VDD, temperature, and local and global threshold variation.
In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, ...