The impact of interface/border defect on performance and reliability was investigated for gate-first and gate-last high-k/metal-gate CMOSFET.
The impact of interface/border defect on performance and reliability was investigated for gate-first and gate-last high-k/metal-gate CMOSFET.
This work presents an analysis of the analog performance of SOI MuGFET devices and the impact of different TiN metal gate electrode thickness.Thinner TiN metal ...
The impact of interface/border defect on performance and reliability was investigated for gate-first and gate-last high-k/metal-gate CMOSFET.
Missing: MOSFET. | Show results with:MOSFET.
Aug 9, 2024 · The impact of interface/border defect on performance and reliability was investigated for gate-first and gate-last high-k/metal-gate CMOSFET.
The performance and reliability of MOS devices are strongly dependent on the formation of insulator layer (native or deposited), interface states (Nss) ...
Missing: defect | Show results with:defect
Aug 15, 2023 · The density and lifetimes of border traps in HfO2 are examined using the Heiman function and strongly affect the hysteresis of capacitance– ...
The interface between the gate electrode and the gate oxide is at least as critical to the FET performance as that between channel and the oxide. This interface ...
Aug 16, 2021 · We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconductor (MOS) interface properties of Si 0.78 Ge 0.22 gate ...
La-doped HfSiO samples show lower threshold voltage (Vth) and gate current (Igate), which is attributed to dipole formation at the high-k/SiO2 interface.