A two-dimensional numerical solution of electrostatic potential and electric field profiles are presented for lightly doped nano-scale Double-Gate ...
A two-dimensional numerical solution of electrostatic potential and electric field profiles are presented for lightly doped nano-scale Double-Gate ...
A two-dimensional numerical solution of electrostatic potential and electric field profiles are presented for lightly doped nano-scale Double-Gate ...
A two-dimensional numerical solution of electrostatic potential and electric field profiles are presented for lightly doped nano-scale Double-Gate ...
This paper presents a numerical simulation study for electrical characteristics of double-gate (DG) nano-MOSFET at equilibrium thin-body condition. The ...
Two-dimensional numerical modeling of lightly doped nano-scale double-gate MOSFET ; Journal: Microelectronics Journal, 2006, № 6, p. 537-545 ; Publisher: Elsevier ...
A two-dimensional numerical modeling of a uniformly doped nanoscale Double-Gate SOI n-MOSFET under illuminated condition including quantum mechanical ...
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Abstract: The 2D surface potential and mobility models are proposed for symmetric doped/undoped channel double gate FET. (DGFET) device.
Two Dimensional Numerical Modeling of Lightly Doped Nanoscale Double-Gate MOSFET · Journal of Computational and Theoretical Nanoscience 2(3): 414-422 · 2005 ...
The double-gate (DG) MOSFET, illustrated in Figure 1, has been considered as the most promising device structure to extend CMOS scaling into the nanometer ...