A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14nm) and symmetrical diffusive S/D contacts is presented ...
A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented ...
A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around. (14 nm) and symmetrical diffusive S/D contacts is presented ...
A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented ...
A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14nm) and symmetrical diffusive S/D contacts is presented ...
Apr 1, 2017 · This paper proposes a cylindrical vertical Gate-All-Around Transistor with nanowire of compound III-V semiconductor material In0.53Ga0.47As n-type device with ...
Apr 19, 2016 · Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain ...
This work explores compact modeling of 3D GAA-JLNTs based on physics of junctionless transport. The model features an explicit continuous analytical form of ...
Jun 17, 2024 · This paper introduces, for the first time, a dual-input logic gate circuit achieved using 3D vertical transistors with nanoscale sub-20-nm GAA.
We report a high performance field-effect transistor implemented on massively parallel dense vertical nanowire arrays with silicided source/drain contacts.
Missing: sub- 15nm
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