A junctionless nanowire transistor with a dual-material gate H Lou, L Zhang, Y Zhu, X Lin, S Yang, J He, M Chan IEEE Transactions on Electron Devices 59 (7), 1829-1836, 2012 | 200 | 2012 |
Real-time multilead convolutional neural network for myocardial infarction detection W Liu, M Zhang, Y Zhang, Y Liao, Q Huang, S Chang, H Wang, J He IEEE journal of biomedical and health informatics 22 (5), 1434-1444, 2017 | 171 | 2017 |
Multiple-feature-branch convolutional neural network for myocardial infarction diagnosis using electrocardiogram W Liu, Q Huang, S Chang, H Wang, J He Biomedical Signal Processing and Control 45, 22-32, 2018 | 163 | 2018 |
BSIM4. 3.0 MOSFET Model User; s Manual X Xi, M Dunga, J He, W Liu, KM Cao, X Jin, JJ Ou, M Chan, AM Niknejad, ... University of California, Berkeley 1 (1.01), 1.02, 2003 | 161 | 2003 |
Bsim4. 6.0 mosfet model MV Dunga, X Xi, J He, W Liu, KM Cao, X Jin, JJ Ou, M Chan, AM Niknejad, ... University of California, Berkeley, 2006 | 139 | 2006 |
Vertically stacked silicon nanowire transistors fabricated by inductive plasma etching and stress-limited oxidation RMY Ng, T Wang, F Liu, X Zuo, J He, M Chan IEEE electron device letters 30 (5), 520-522, 2009 | 129 | 2009 |
MFB-CBRNN: A hybrid network for MI detection using 12-lead ECGs W Liu, F Wang, Q Huang, S Chang, H Wang, J He IEEE journal of biomedical and health informatics 24 (2), 503-514, 2019 | 125 | 2019 |
An analytical charge model for double-gate tunnel FETs L Zhang, X Lin, J He, M Chan IEEE Transactions on Electron Devices 59 (12), 3217-3223, 2012 | 120 | 2012 |
Zero-mask contact fuse for one-time-programmable memory in standard CMOS processes M Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ... IEEE electron device letters 32 (7), 955-957, 2011 | 103 | 2011 |
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan IEEE Transactions on Electron Devices 55 (8), 2187-2194, 2008 | 96 | 2008 |
BSIM4v4. 7 MOSFET model TH Morshed, DD Lu, WM Yang, MV Dunga, X Xi, J He, W Liu, MC Kanyu, ... Dept Elect Eng Comput Sci Univ Calif. Berkeley Berkeley CA USA Tech Rep, 2011 | 86 | 2011 |
A novel barrier controlled tunnel FET H Wang, S Chang, Y Hu, H He, J He, Q Huang, F He, G Wang IEEE electron device letters 35 (7), 798-800, 2014 | 78 | 2014 |
A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors L Zhang, J He, M Chan 2012 International Electron Devices Meeting, 6.8. 1-6.8. 4, 2012 | 74 | 2012 |
Analysis and design of 60-GHz SPDT switch in 130-nm CMOS J He, YZ Xiong, YP Zhang IEEE Transactions on Microwave Theory and Techniques 60 (10), 3113-3119, 2012 | 70 | 2012 |
Multi-information fusion neural networks for arrhythmia automatic detection A Chen, F Wang, W Liu, S Chang, H Wang, J He, Q Huang Computer methods and programs in biomedicine 193, 105479, 2020 | 67 | 2020 |
A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs J He, X Zhang, G Zhang, M Chan, Y Wang Solid-State Electronics 50 (3), 416-421, 2006 | 63 | 2006 |
A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region J He, M Chan, X Zhang, Y Wang IEEE transactions on electron devices 53 (9), 2008-2016, 2006 | 60 | 2006 |
A novel ECG signal compression method using spindle convolutional auto-encoder F Wang, Q Ma, W Liu, S Chang, H Wang, J He, Q Huang Computer methods and programs in biomedicine 175, 139-150, 2019 | 57 | 2019 |
Machine learning method for tight-binding Hamiltonian parameterization from ab-initio band structure Z Wang, S Ye, H Wang, J He, Q Huang, S Chang npj Computational Materials 7 (1), 11, 2021 | 54 | 2021 |
A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach J He, X Xuemei, M Chan, CH Lin, A Niknejad, C Hu International Symposium on Signals, Circuits and Systems. Proceedings, SCS …, 2004 | 54* | 2004 |