| Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8), 2023 | 50 | 2023 |
| Nucleation of Ga droplets on Si and SiOx surfaces H Detz, M Kriz, D MacFarland, S Lancaster, T Zederbauer, M Capriotti, ... Nanotechnology 26 (31), 315601, 2015 | 31 | 2015 |
| Investigating charge trapping in ferroelectric thin films through transient measurements S Lancaster, PD Lomenzo, M Engl, B Xu, T Mikolajick, U Schroeder, ... Frontiers in Nanotechnology 4, 939822, 2022 | 22 | 2022 |
| Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga H Detz, M Kriz, S Lancaster, D MacFarland, M Schinnerl, T Zederbauer, ... Journal of Vacuum Science & Technology B 35 (1), 2017 | 21 | 2017 |
| Ferroelectric Tunneling Junctions for Edge Computing E Covi, QT Duong, S Lancaster, V Havel, J Coignus, J Barbot, O Richter, ... 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2021 | 19 | 2021 |
| Reduced fatigue and leakage of ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface HA Hsain, Y Lee, S Lancaster, PD Lomenzo, B Xu, T Mikolajick, ... Nanotechnology 34 (12), 125703, 2023 | 17 | 2023 |
| Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films HA Hsain, Y Lee, S Lancaster, M Materano, R Alcala, B Xu, T Mikolajick, ... ACS Applied Materials & Interfaces 14 (37), 42232-42244, 2022 | 17 | 2022 |
| Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions R Fontanini, J Barbot, M Segatto, S Lancaster, Q Duong, F Driussi, ... IEEE Journal of the Electron Devices Society 10, 593-599, 2022 | 17 | 2022 |
| Growth rate dependence of boron incorporation into BxGa1− xAs layers H Detz, D MacFarland, T Zederbauer, S Lancaster, AM Andrews, ... Journal of Crystal Growth 477, 77-81, 2017 | 17 | 2017 |
| Focused ion beam implantation for the nucleation of self-catalyzed III-V nanowires S Lancaster, M Kriz, M Schinnerl, D MacFarland, T Zederbauer, ... Microelectronic Engineering 177, 93-97, 2017 | 12 | 2017 |
| A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films S Lancaster, T Mikolajick, S Slesazeck Applied Physics Letters 120 (2), 2022 | 11 | 2022 |
| Quasi One-Dimensional Metal–Semiconductor Heterostructures S Benter, VG Dubrovskii, M Bartmann, A Campo, I Zardo, M Sistani, ... Nano letters 19 (6), 3892-3897, 2019 | 11 | 2019 |
| Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing S Lancaster, QT Duong, E Covi, T Mikolajick, S Slesazeck ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022 | 10 | 2022 |
| Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications E Covi, S Lancaster, S Slesazeck, V Deshpande, T Mikolajick, ... 2022 IEEE International Conference on Flexible and Printable Sensors and …, 2022 | 9 | 2022 |
| Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions R Fontanini, J Barbot, M Segatto, S Lancaster, Q Duong, F Driussi, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 9 | 2021 |
| Versatile experimental setup for FTJ characterization M Massarotto, F Driussi, A Affanni, S Lancaster, S Slesazeck, T Mikolajick, ... Solid-State Electronics 194, 108364, 2022 | 6 | 2022 |
| Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect … M Capriotti, EB Treidel, C Fleury, O Bethge, C Ostermaier, M Rigato, ... Solid-State Electronics 125, 118-124, 2016 | 6 | 2016 |
| Bridging large-signal and small-signal responses of hafnium-based ferroelectric tunnel junctions M Massarotto, M Segatto, F Driussi, A Affanni, S Lancaster, S Slesazeck, ... 2023 35th International Conference on Microelectronic Test Structure (ICMTS …, 2023 | 5 | 2023 |
| Novel experimental methodologies to reconcile large-and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions M Massarotto, F Driussi, A Affanni, S Lancaster, S Slesazeck, T Mikolajick, ... Solid-State Electronics 200, 108569, 2023 | 5 | 2023 |
| The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2 Capacitors R Alcala, PD Lomenzo, T Mittmann, B Xu, R Guido, S Lancaster, ... 2022 International Electron Devices Meeting (IEDM), 32.8. 1-32.8. 4, 2022 | 5 | 2022 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenVerified email at namlab.com
