The recombination rate coefficients (RRCs) A, B, and C in MOVPE‐grown single‐quantum‐well
light emitting diodes spanning the entire blue‐green spectral range are determined by …

The microstructural evolution of InGaN/GaN multiple quantum wells grown by metalorganic
chemical vapor phase epitaxy was studied as a function of the growth temperature of the …

Gallium nitride (GaN) laser diodes (LDs) are considered for visible light communications (VLC)
in free space, underwater, and in plastic optical fibers (POFs). A review of recent results is …

Superluminescent diodes represent a device type which can fill the gap between light emitting
diodes (LEDs) and laser diodes. The light generation based on Amplified Spontaneous …

InGaN/GaN multiple quantum well structures were grown on bulk GaN and on sapphire
substrates using the metalorganic vapor-phase epitaxy in order to study the influence of …

The effect of growth temperature and precursor flow on the doping level and surface
morphology of Ge-doped GaN layers was researched. The results show that germanium is more …

Gallium nitride (GaN) doped with germanium at a level of 10 20 cm −3 is proposed as a
viable material for cladding layers in blue- and green-emitting laser diodes. Spectral …

The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al,
In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and …

We report on a green light-emitting device, in which the light of an efficient blue 1 mm 2
GaInN/GaN light-emitting diode (LED) is converted into green light by an optically pumped GaInN/…

In this work we investigate the role of threading dislocations in nitride light emitters with different
indium composition. We compare the properties of laser diodes grown on the low defect …