Area‐selective atomic layer deposition (AS‐ALD) offers tremendous advantages in
comparison with conventional top‐down patterning processes that atomic‐level selective …

In the past decades, Moore's law drives the semiconductor industry to continuously shrink
the critical size of transistors down to 7 nm. As transistors further downscaling to smaller …

Area-selective deposition (ASD) enables the growth of materials on target regions of
patterned substrates for applications in fields ranging from microelectronics to catalysis …

Area-selective deposition (ASD) is a promising bottom-up manufacturing solution for
catalysts and nanoelectronic devices. However, industrial applications are limited as highly …

Area-selective deposition (ASD) of polymers is expected to be useful for self-aligned
patterning of nucleation inhibitors, sacrificial layers, and air-gap materials during future …

During TiO 2 atomic layer deposition (ALD) using TiCl 4 and H 2 O at∼ 150 C, nucleation
proceeds rapidly on hydroxylated SiO 2 but is inherently delayed on passivated surfaces …

Alkyl-terminated surfaces have received significant interest as growth-blocking surfaces in
area-selective deposition (ASD). Gas-phase chemical functionalization is attractive in this …

Extreme ultraviolet (EUV) lithography is a critical enabler in next-generation technology,
although the low etch resistance of conventional organic EUV resists results in low …

Transferring traditional plasmonic noble metal nanomaterials from the laboratory to
industrial production has remained challenging due to the high price of noble metals. The …

Ruthenium (Ru) has drawn attention in the field of future semiconductor processing as a
diffusion barrier layer and an electrode material. Here, ruthenium films are deposited by …