-Ga2O3 FinFETs by MacEtch: temperature dependent IV characteristics
2023 Device Research Conference (DRC), 2023•ieeexplore.ieee.org
The high temperature performance of electronic devices using the emerging material, β-Ga
2 O 3, is important for the high-power applications under extreme environments. In this work,
the high aspect-ratio β-Ga 2 O 3 FinFETs were tested above room temperature up to 298° C
in vacuum for the first time. The hysteresis remained relatively stable (0.1∼ 0.35 V) for the
50° C to 150° C measurements while it was exponentially increased when the temperature
exceeded 150° C and eventually reached 4.59 V at 298° C. In addition, the specific on …
2 O 3, is important for the high-power applications under extreme environments. In this work,
the high aspect-ratio β-Ga 2 O 3 FinFETs were tested above room temperature up to 298° C
in vacuum for the first time. The hysteresis remained relatively stable (0.1∼ 0.35 V) for the
50° C to 150° C measurements while it was exponentially increased when the temperature
exceeded 150° C and eventually reached 4.59 V at 298° C. In addition, the specific on …
The high temperature performance of electronic devices using the emerging material, -Ga 2 O 3 , is important for the high-power applications under extreme environments. In this work, the high aspect-ratio -Ga 2 O 3 FinFETs were tested above room temperature up to 298°C in vacuum for the first time. The hysteresis remained relatively stable (0.1 ∼ 0.35 V) for the 50°C to 150 °C measurements while it was exponentially increased when the temperature exceeded 150 °C and eventually reached 4.59V at 298°C. In addition, the specific on-resistance ( ) and subthreshold swing ( ) increased gradually with high temperature. This high temperature studies performed here can contribute to the future development of high performance 3-dimensional -Ga 2 O 3 electron devices.
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