5 V Supply Voltage Reference Based on the MOSFET ZTC Condition
Proceedings of the 28th Symposium on Integrated Circuits and Systems Design, 2015•dl.acm.org
The continuous scaling of CMOS devices has required the consequent reduction of the
supply voltages. There is a need for analog and RF circuits able to operate under at supplies
lower than 0.5 V. This paper presents a voltage reference based on the MOSFET zero-
temperature condition (ZTC) that operates with a low 0.5 V supply. The circuit is composed
by a diode-connected MOS transistor operating near the ZTC condition that is biased by a
proportional-to-absolute-temperature (PTAT) current reference implemented with Schottky …
supply voltages. There is a need for analog and RF circuits able to operate under at supplies
lower than 0.5 V. This paper presents a voltage reference based on the MOSFET zero-
temperature condition (ZTC) that operates with a low 0.5 V supply. The circuit is composed
by a diode-connected MOS transistor operating near the ZTC condition that is biased by a
proportional-to-absolute-temperature (PTAT) current reference implemented with Schottky …
The continuous scaling of CMOS devices has required the consequent reduction of the supply voltages. There is a need for analog and RF circuits able to operate under at supplies lower than 0.5 V. This paper presents a voltage reference based on the MOSFET zero-temperature condition (ZTC) that operates with a low 0.5 V supply. The circuit is composed by a diode-connected MOS transistor operating near the ZTC condition that is biased by a proportional-to-absolute-temperature (PTAT) current reference implemented with Schottky-diodes. The ZTC condition is analysed using a continuous MOSFET model that is valid from weak to strong inversion and the circuit behaviour is described by theoretical expressions. Our reference circuit is designed for 3 versions: each with MOSFETs of different threshold voltage (standard-VT, low-VT, and zero-VT), all available in the 130 nm CMOS process used. These designs result in three different and very low reference voltages: 312, 237, and 51 mV. All 3 designed reference operate in the range of 0.45 to 1.2 V of supply voltages, consuming 1 uA of typical supply current. Post-layout simulations present a Temperature Coefficients (TCs) of 214, 372, and 953 ppm/°C in a temperature range from -55 to 125°C, respectively. Monte-Carlo simulations show the fabrication variability impact on the circuit performance. The voltage reference was designed in a 130 nm process and it uses 0.014 mm2 of silicon area.
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