In this study, class F amplifier is designed and simulated for RF applications with high linearity in the 5-6 GHz band range. 2-way amplification method was used for the implementation. The input signal is transferred to the amplifier circuits after splitting with Wilkinson power divider. The amplified power in the two arms is then collected by the Gysel power combiner and given to the output. The simulations were made in the AWR Microwave Office program on Rogers RT/Duroid 5870 dielectric material with a thickness of 0.78 mm and a dielectric constant of 2.33. Gallium Nitrite HEMT type CREE CGH40006P transistor was used in the design. As a result of the simulation, the at least 11 dB power gain across the band was obtained with 30% power added efficiency and approximately 37 dBm output power.