A 0.3 V low-power temperature-insensitive ring oscillator in 90 nm CMOS process
2013 International Symposium onVLSI Design, Automation, and Test …, 2013•ieeexplore.ieee.org
A low-power temperature-insensitive ring oscillator under a 0.3 V supply has been
presented in this paper. A bootstrapping technique is proposed to compensate the
temperature coefficient at near-threshold supply by generating a boosted voltage. As
compared with conventional ring oscillators, the proposed one provides 1.1% over a
temperature range from 0 to 125° C without any trimming. The chip is fabricated in 90 nm
1P9M SPRVT CMOS process. The active core area is only 31.5 μm× 61.5 μm. The proposed …
presented in this paper. A bootstrapping technique is proposed to compensate the
temperature coefficient at near-threshold supply by generating a boosted voltage. As
compared with conventional ring oscillators, the proposed one provides 1.1% over a
temperature range from 0 to 125° C without any trimming. The chip is fabricated in 90 nm
1P9M SPRVT CMOS process. The active core area is only 31.5 μm× 61.5 μm. The proposed …
A low-power temperature-insensitive ring oscillator under a 0.3 V supply has been presented in this paper. A bootstrapping technique is proposed to compensate the temperature coefficient at near-threshold supply by generating a boosted voltage. As compared with conventional ring oscillators, the proposed one provides 1.1% over a temperature range from 0 to 125 °C without any trimming. The chip is fabricated in 90 nm 1P9M SPRVT CMOS process. The active core area is only 31.5μm×61.5μm. The proposed oscillator operates 235 MHz with a supply voltage of 0.3 V and has a power consumption of 7 μW at 25 °C.
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