BACKGROUND AND AIMS: Inhalation of hypertonic saline (HTS) has short term positive
effects on airways clearance in non-cystic fibrosis (CF) bronchiectasis, however its long term …

Heterostructure nanowires have many potential applications due to the avoidance of
interface defects by lateral strain relaxation. However, most heterostructure semiconductor …

InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and
characterized by electrical measurements and transmission electron microscopy. Down-…

Photoconductors using vertical arrays of InAs/InAs 1–x Sb x nanowires with varying Sb
composition x have been fabricated and characterized. The spectrally resolved photocurrents are …

We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour
phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III–V nanowire …

Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become a …

We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors.
The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for …

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions.
Esaki diode characteristics with maximum reverse current of 1750 kA/cm 2 at 0.50 V, …

In this letter we report on high-frequency measurements on vertically standing III−V nanowire
wrap-gate MOSFETs (metal−oxide−semiconductor field-effect transistors). The nanowire …

III–V semiconductors have so far predominately been employed for n-type transistors in high-frequency
applications. This development is based on the advantageous transport …