Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm
L Lançon, H Vallée, G Montoriol… - 2022 20th IEEE …, 2022 - ieeexplore.ieee.org
L Lançon, H Vallée, G Montoriol, F Brunelli, T Taris
2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), 2022•ieeexplore.ieee.orgThis paper presents a design methodology to size a transimpedance amplifier for an
automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it
presents the essential equations to develop a small-signal model featuring a limited number
of parameters, which can be exploited to quickly explore the different design optimums of a
circuit. Post-layout simulations are presented to validate the model and the methodology.
The designed TIA presents a gain of 65 dBΩ, a bandwidth of 80 MHz, an input impedance of …
automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it
presents the essential equations to develop a small-signal model featuring a limited number
of parameters, which can be exploited to quickly explore the different design optimums of a
circuit. Post-layout simulations are presented to validate the model and the methodology.
The designed TIA presents a gain of 65 dBΩ, a bandwidth of 80 MHz, an input impedance of …
This paper presents a design methodology to size a transimpedance amplifier for an automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it presents the essential equations to develop a small-signal model featuring a limited number of parameters, which can be exploited to quickly explore the different design optimums of a circuit. Post-layout simulations are presented to validate the model and the methodology. The designed TIA presents a gain of 65 dBΩ, a bandwidth of 80 MHz, an input impedance of 74 Ω and input-referred noise of 50 yA 2 .Hz −1 .
ieeexplore.ieee.org
Showing the best result for this search. See all results