Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered 1 , 2 . Atomically thin two-dimensional …

Down‐scaling of transistor size in the lateral dimensions must be accompanied by a
corresponding reduction in the channel thickness to ensure sufficient gate control to turn off the …

Because of the intrinsic low carrier density of monolayer two-dimensional (2D) materials,
doping is crucial for the performance of underlap top-gated 2D devices. However, wet etching …

Scaling of monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs) is
an important step toward evaluating the application space of TMD materials. Although some …

Because of the lack of contact and spacer doping techniques for two-dimensional (2D)
transistors, most high-performance 2D devices have been produced with nontypical structures …

Antimony (Sb) semimetal was studied as a novel contact approach for enabling two-dimensional
(2D) material towards advanced electronic device applications. With this approach, an …

We demonstrate the highest nFET current of 390 μA/μ m at V DS = 1 V based on CVD Mos 2
mono layers without intentional doping. The transistor exhibits good subthreshold swing of …

This work demonstrates the first successful integration of monolayer MoS 2 nanosheet FET
in a gate-all-around configuration. At a gate length of 40nm, the transistor exhibits a …

Area-selective channel material growth for 2D transistors is more desirable for volume
manufacturing than exfoliation or wet/dry transfer after large area growth. We demonstrate the first …

Understanding what factors passengers consider when selecting an airline is critical, as
airlines can utilize this information in market segmentation and marketing strategies. However, …