Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors
X Garros, A Laurent, A Subirats, X Federspiel… - Microelectronics …, 2018 - Elsevier
In this paper, dynamic variability (DV) induced by BTI is deeply investigated in nano-scaled
devices by means of statistical measurements and modeling. The impact of a single charge
q on V t is first investigated through 3D electrostatic simulations. In planar devices, this MC
modeling allows proving that the average V t shift induced by a single q denoted η t is
inversely proportional to the device area. In trigate 3D transistors, BTI trapping not only
occurs at the top surface (TS) oxide but also at the device sidewalls (SW). For Πfet …
devices by means of statistical measurements and modeling. The impact of a single charge
q on V t is first investigated through 3D electrostatic simulations. In planar devices, this MC
modeling allows proving that the average V t shift induced by a single q denoted η t is
inversely proportional to the device area. In trigate 3D transistors, BTI trapping not only
occurs at the top surface (TS) oxide but also at the device sidewalls (SW). For Πfet …
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