The 4 ^th fundamental circuit elements - memristor received significant attentions after a real device was recently demonstrated for the first time. Besides the solid-state thin film memristive device, sprintonic memristor was also invented based on the magnetic technology. In this paper, we describe a compact model of the spintronic memristor based on the magnetic-domain-wall motion mechanism. Our proposed compact model can be easily implemented by Verilog-A language and compatible to SPICE-based simulation. Furthermore, we discuss the corner model generation of spintronic memristors to improve the simulation efficiency of large scale or complex circuitry, e.g., memory array or some analog circuit design. The process variation effects of the model parameters of are considered in the corner model of spintronic memristor.