Complementary Inverters Based on Soluble P-and N-Channel Organic Semiconductors
M Chikamatsu, Y Horii, M Lu, Y Yoshida… - IEICE transactions on …, 2011 - search.ieice.org
M Chikamatsu, Y Horii, M Lu, Y Yoshida, R Azumi, K Yase
IEICE transactions on electronics, 2011•search.ieice.orgWe fabricated solution-processed organic complementary inverters based on α, ω-bis (2-
hexyldecyl) sexithiophene (BHD6T) for p-channel and C60-fused N-methylpyrrolidine-meta-
dodecyl phenyl (C60MC12) for n-channel. The BHD6T and C60MC12 thin-film transistors
showed high field-effect mobilities of 0.035 and 0.057 cm 2/Vs, respectively. The
complementary inverter with a supply voltage of 50 V exhibited inverting voltages of 26.8 V
for forward and 27.0 V for backward sweeps and a high gain of 76.
hexyldecyl) sexithiophene (BHD6T) for p-channel and C60-fused N-methylpyrrolidine-meta-
dodecyl phenyl (C60MC12) for n-channel. The BHD6T and C60MC12 thin-film transistors
showed high field-effect mobilities of 0.035 and 0.057 cm 2/Vs, respectively. The
complementary inverter with a supply voltage of 50 V exhibited inverting voltages of 26.8 V
for forward and 27.0 V for backward sweeps and a high gain of 76.
We fabricated solution-processed organic complementary inverters based on α,ω-bis(2-hexyldecyl)sexithiophene (BHD6T) for p-channel and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) for n-channel. The BHD6T and C60MC12 thin-film transistors showed high field-effect mobilities of 0.035 and 0.057 cm2/Vs, respectively. The complementary inverter with a supply voltage of 50 V exhibited inverting voltages of 26.8 V for forward and 27.0 V for backward sweeps and a high gain of 76.
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