User profiles for Guanzhong Huang
Guanzhong HuangUniversity College Dublin Verified email at ucd.ie Cited by 99 |
High performance ferrite–based anode La0. 5Sr0. 5Fe0. 9Mo0. 1O3–δ for intermediate–temperature solid oxide fuel cell
F Liu, L Zhang, G Huang, B Niu, X Li, L Wang, J Zhao… - Electrochimica …, 2017 - Elsevier
A ferrite–based perovskite oxide La 0.5 Sr 0.5 Fe 0.9 Mo 0.1 O 3–δ (LSFMo) has been
evaluated as the anode of intermediate–temperature solid oxide fuel cell (IT–SOFC). XRD result …
evaluated as the anode of intermediate–temperature solid oxide fuel cell (IT–SOFC). XRD result …
A Bluetooth low-energy (BLE) transceiver with TX/RX switchable on-chip matching network, 2.75 mW high-IF discrete-time receiver, and 3.6 mW all-digital transmitter
…, L Cho, CP Jou, FL Hsueh, G Huang… - … IEEE Symposium on …, 2016 - ieeexplore.ieee.org
We present a new ultra-low-power (ULP) transceiver for Internet-of-Things (IoT) optimized
for 28-nm CMOS. The receiver (RX) employs a high-rate (up to 10 GS/s) discrete-time (DT) …
for 28-nm CMOS. The receiver (RX) employs a high-rate (up to 10 GS/s) discrete-time (DT) …
Induced-photorefraction attack against quantum key distribution
Lithium niobate ( Li Nb O 3 , LN) devices play critical roles in quantum information processing.
However, for special applications like quantum key distribution (QKD), the characteristics …
However, for special applications like quantum key distribution (QKD), the characteristics …
Development of Nb-based alloy membranes with improved resistance to corrosion by H2S
E Yan, S Zhang, W Liu, K Zhang, G Huang, L Jia… - Journal of Membrane …, 2024 - Elsevier
At present, the interest in non-Pd hydrogen permeation membranes mainly focuses on group
5 B metals (Nb, V, Ta) and their alloys. To solve the problem of easy oxidation and weak …
5 B metals (Nb, V, Ta) and their alloys. To solve the problem of easy oxidation and weak …
A fast bootstrapped switch for high-speed high-resolution A/D converter
G Huang, P Lin - 2010 IEEE Asia Pacific Conference on …, 2010 - ieeexplore.ieee.org
This paper introduces new charge and discharge paths to speed up the turn-on and turn-off
process of bootstrapped switch. In the mean time, linearity is improved without increasing …
process of bootstrapped switch. In the mean time, linearity is improved without increasing …
Polarization-insensitive interferometer based on a hybrid integrated planar light-wave circuit
Interferometers are essential elements in classical and quantum optical systems. The strictly
required stability when extracting the phase of photons is vulnerable to polarization …
required stability when extracting the phase of photons is vulnerable to polarization …
Nanoscale origins of ferroelastic domain wall mobility in ferroelectric multilayers
The nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films
that lead to giant electromechanical responses are investigated. We present direct evidence …
that lead to giant electromechanical responses are investigated. We present direct evidence …
A 48-mW, 12-bit, 150-MS/s pipelined ADC with digital calibration in 65nm CMOS
A 1.2 V 12-bit 150 MS/s pipelined ADC with low-gain op-amps (DC gain ≈15 dB) is
fabricated in a 65-nm CMOS process. The proposed 5-transistor single stage op-amp enables …
fabricated in a 65-nm CMOS process. The proposed 5-transistor single stage op-amp enables …
Transmittance-invariant phase modulator for chip-based quantum key distribution
In chip-based quantum key distribution (QKD) systems, the non-ideal quantum state preparation
due to the imperfect electro-optic phase modulators (EOPM) decreases the secret key …
due to the imperfect electro-optic phase modulators (EOPM) decreases the secret key …
Germanium-on-silicon avalanche photodiode for 1550 nm weak light signal detection at room temperature
…, B Chen, Z Zhi, X Li, G Zhang, P Ye, G Huang… - Chinese Optics …, 2022 - opg.optica.org
To optimize the dark current characteristic and detection efficiency of the 1550 nm weak light
signal at room temperature, this work proposes a Ge-on-Si avalanche photodiode (APD) in …
signal at room temperature, this work proposes a Ge-on-Si avalanche photodiode (APD) in …