Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes
SC Chang, YS Lee - … on Photonics in Switching and Computing …, 2019 - ieeexplore.ieee.org
SC Chang, YS Lee
2019 24th OptoElectronics and Communications Conference (OECC) and …, 2019•ieeexplore.ieee.orgWe present a temperature dependence study of InGaAs/InAlAs single photon avalanche
diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The
temperature coefficient is sensitive to the avalanche region. We have excluded the issue of
imperfect sidewall. However, the physics behind needs further investigation.
diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The
temperature coefficient is sensitive to the avalanche region. We have excluded the issue of
imperfect sidewall. However, the physics behind needs further investigation.
We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.
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