Insulated Gate Bipolar Transistor modules, known as IGBT modules, play a critical and indispensable role in a wide range of power converter applications. However, IGBT modules are not immune to failures, which can have severe consequences such as system faults, downtime, and economic losses for industries relying on their functionality. Accurately estimating the junction temperature of IGBT modules is essential for managing their thermal characteristics, performing condition monitoring and lifetime prediction. Therefore, in this paper, recent IGBT junction temperature estimation methods of are summarized. First, the package, circuit principle and failure mode of IGBT module are introduced, followed by a discussion of various junction temperature estimation methods, including methods based on optical technologies, thermal network and Finite Element Analysis models, and temperature-sensitive electrical parameters (TSEPs). Finally, future research challenges and opportunities for implementing these technologies are presented.