User profiles for Luigi Di Benedetto
Luigi DI BENEDETTODept. Industrial Eng. - University of Salerno Verified email at unisa.it Cited by 1101 |
85–440 K temperature sensor based on a 4H-SiC Schottky diode
S Rao, L Di Benedetto, G Pangallo… - IEEE Sensors …, 2016 - ieeexplore.ieee.org
The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature
range from T = 85 up to 443 K is presented. The linear dependence on temperature of the …
range from T = 85 up to 443 K is presented. The linear dependence on temperature of the …
Low-power detection and classification for in-sensor predictive maintenance based on vibration monitoring
In this work, a new custom design of an anomaly detection and classification system is
proposed. It is composed of a convolutional Auto-Encoder (AE) hardware design to perform …
proposed. It is composed of a convolutional Auto-Encoder (AE) hardware design to perform …
Low power tiny binary neural network with improved accuracy in human recognition systems
Human Activity Recognition requires very high accuracy to be effectively employed into practical
applications, ranging from elderly care to microsurgical devices. The highest accuracies …
applications, ranging from elderly care to microsurgical devices. The highest accuracies …
Low-power HWAccelerator for AI edge-computing in human activity recognition systems
…, D Pau, C Parrella, L Di Benedetto… - 2020 2nd IEEE …, 2020 - ieeexplore.ieee.org
In this paper, an energy efficient HW accelerator for AI edge-computing in Human Activity
Recognition is proposed. The system processes samples from a tri-axial accelerometer and …
Recognition is proposed. The system processes samples from a tri-axial accelerometer and …
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET
GD Licciardo, L Di Benedetto… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A new analytical description of the trapped charge distribution at the semiconductor-insulator
interface of 4H-SiC vertical-DMOSFET has been derived as a function of the surface …
interface of 4H-SiC vertical-DMOSFET has been derived as a function of the surface …
A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs
L Di Benedetto, GD Licciardo… - … on Electron Devices, 2016 - ieeexplore.ieee.org
For the first time, a full analytical model of the electric field in the gate oxide of 4H-polytype
silicon carbide (4H-SiC) power double-implanted MOSFET devices is shown. It takes into …
silicon carbide (4H-SiC) power double-implanted MOSFET devices is shown. It takes into …
A partially binarized hybrid neural network system for low-power and resource constrained human activity recognition
A custom Human Activity Recognition system is presented based on the resource-constrained
Hardware (HW) implementation of a new partially binarized Hybrid Neural Network. The …
Hardware (HW) implementation of a new partially binarized Hybrid Neural Network. The …
Multiplier-less stream processor for 2D filtering in visual search applications
…, C Cappetta, L Di Benedetto… - … on Circuits and …, 2016 - ieeexplore.ieee.org
A new 2D convolution-based filter is presented, which is specifically designed to improve
visual search applications. It exploits a new radix-3 partitioning method of integer numbers, …
visual search applications. It exploits a new radix-3 partitioning method of integer numbers, …
Improved workflow, sonographer productivity, and cost-effectiveness of echocardiographic service for inpatients by using miniaturized systems
…, R Compassi, G Tonutti, L Di Benedetto… - European Journal of …, 2009 - academic.oup.com
Aims The aim of this study was to assess the cost-effectiveness of using certified sonographers
and miniaturized echocardiography systems to perform echocardiograms at bedside in …
and miniaturized echocardiography systems to perform echocardiograms at bedside in …
Analytical model and design of 4H-SiC planar and trenched JBS diodes
L Di Benedetto, GD Licciardo… - … on Electron Devices, 2016 - ieeexplore.ieee.org
An analytical instrument to design 4H-SiC planar and trenched junction barrier Schottky (JBS)
diodes is proposed. The tool is based on a novel full analytical description of the electric …
diodes is proposed. The tool is based on a novel full analytical description of the electric …