User profiles for Luigi Di Benedetto

Luigi DI BENEDETTO

Dept. Industrial Eng. - University of Salerno
Verified email at unisa.it
Cited by 1101

85–440 K temperature sensor based on a 4H-SiC Schottky diode

S Rao, L Di Benedetto, G Pangallo… - IEEE Sensors …, 2016 - ieeexplore.ieee.org
The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature
range from T = 85 up to 443 K is presented. The linear dependence on temperature of the …

Low-power detection and classification for in-sensor predictive maintenance based on vibration monitoring

P Vitolo, A De Vita, L Di Benedetto, D Pau… - IEEE Sensors …, 2022 - ieeexplore.ieee.org
In this work, a new custom design of an anomaly detection and classification system is
proposed. It is composed of a convolutional Auto-Encoder (AE) hardware design to perform …

Low power tiny binary neural network with improved accuracy in human recognition systems

A De Vita, D Pau, L Di Benedetto… - 2020 23rd Euromicro …, 2020 - ieeexplore.ieee.org
Human Activity Recognition requires very high accuracy to be effectively employed into practical
applications, ranging from elderly care to microsurgical devices. The highest accuracies …

Low-power HWAccelerator for AI edge-computing in human activity recognition systems

…, D Pau, C Parrella, L Di Benedetto… - 2020 2nd IEEE …, 2020 - ieeexplore.ieee.org
In this paper, an energy efficient HW accelerator for AI edge-computing in Human Activity
Recognition is proposed. The system processes samples from a tri-axial accelerometer and …

Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET

GD Licciardo, L Di Benedetto… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A new analytical description of the trapped charge distribution at the semiconductor-insulator
interface of 4H-SiC vertical-DMOSFET has been derived as a function of the surface …

A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs

L Di Benedetto, GD Licciardo… - … on Electron Devices, 2016 - ieeexplore.ieee.org
For the first time, a full analytical model of the electric field in the gate oxide of 4H-polytype
silicon carbide (4H-SiC) power double-implanted MOSFET devices is shown. It takes into …

A partially binarized hybrid neural network system for low-power and resource constrained human activity recognition

…, A Russo, D Pau, L Di Benedetto… - … on Circuits and …, 2020 - ieeexplore.ieee.org
A custom Human Activity Recognition system is presented based on the resource-constrained
Hardware (HW) implementation of a new partially binarized Hybrid Neural Network. The …

Multiplier-less stream processor for 2D filtering in visual search applications

…, C Cappetta, L Di Benedetto… - … on Circuits and …, 2016 - ieeexplore.ieee.org
A new 2D convolution-based filter is presented, which is specifically designed to improve
visual search applications. It exploits a new radix-3 partitioning method of integer numbers, …

Improved workflow, sonographer productivity, and cost-effectiveness of echocardiographic service for inpatients by using miniaturized systems

…, R Compassi, G Tonutti, L Di Benedetto… - European Journal of …, 2009 - academic.oup.com
Aims The aim of this study was to assess the cost-effectiveness of using certified sonographers
and miniaturized echocardiography systems to perform echocardiograms at bedside in …

Analytical model and design of 4H-SiC planar and trenched JBS diodes

L Di Benedetto, GD Licciardo… - … on Electron Devices, 2016 - ieeexplore.ieee.org
An analytical instrument to design 4H-SiC planar and trenched junction barrier Schottky (JBS)
diodes is proposed. The tool is based on a novel full analytical description of the electric …