Nano-power CMOS voltage reference for RF-powered systems

A Parisi, A Finocchiaro, G Papotto… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
A Parisi, A Finocchiaro, G Papotto, G Palmisano
IEEE Transactions on Circuits and Systems II: Express Briefs, 2018ieeexplore.ieee.org
This brief presents a fully CMOS voltage reference based on a self-biased topology, which
provides low current consumption while saving silicon area. Temperature compensation is
achieved by means of a subthreshold triode-based Widlar current reference and a proper
arrangement of an active load. The proposed voltage reference was fabricated in a standard
0.13-μm CMOS technology and occupies a core area as low as 0.003 mm 2. The circuit
properly operates with a power supply ranging from 2.4 V to 1.1 V while providing a …
This brief presents a fully CMOS voltage reference based on a self-biased topology, which provides low current consumption while saving silicon area. Temperature compensation is achieved by means of a subthreshold triode-based Widlar current reference and a proper arrangement of an active load. The proposed voltage reference was fabricated in a standard 0.13-μm CMOS technology and occupies a core area as low as 0.003 mm 2 . The circuit properly operates with a power supply ranging from 2.4 V to 1.1 V while providing a reference voltage of around 800 mV with an average temperature coefficient of 100 ppm/°C and an overall current consumption below 25 nA. This performance makes the proposed voltage reference very suitable for RF-powered applications.
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