Polarization switching and interface charges in BEOL compatible ferroelectric tunnel junctions
R Fontanini, J Barbot, M Segatto… - … 2021-IEEE 51st …, 2021 - ieeexplore.ieee.org
ESSDERC 2021-IEEE 51st European Solid-State Device Research …, 2021•ieeexplore.ieee.org
We here report a joint experimental and theoretical analysis of polarization switching in
ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into
the ferroelectric-dielectric stack has a large influence on the polarization switching. Our
results are relevant to the physical understanding and to the design of the devices, and for
both memory and memristor applications.
ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into
the ferroelectric-dielectric stack has a large influence on the polarization switching. Our
results are relevant to the physical understanding and to the design of the devices, and for
both memory and memristor applications.
We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.
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