Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
… Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap … in β-Ga 2 O 3 power device
technologies. It will begins with a … Then, brief perspectives on the advanced technologies and …
technologies. It will begins with a … Then, brief perspectives on the advanced technologies and …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics
with capabilities beyond existing technologies … field of β-Ga2O3 relative to either SiC or …
with capabilities beyond existing technologies … field of β-Ga2O3 relative to either SiC or …
Trench gate β-Ga2O3 MOSFETs: a review
X Chen, F Li, HL Hess - Engineering Research Express, 2023 - iopscience.iop.org
… Nowadays trench power MOSFET is one of the world's most popular power … MOSFET
technology to new semiconductor materials is very encouraging. The vertical trench gate MOSFETs …
technology to new semiconductor materials is very encouraging. The vertical trench gate MOSFETs …
β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3 ) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
Recent progress in Ga2O3 power devices
M Higashiwaki, K Sasaki, H Murakami… - … and Technology, 2016 - iopscience.iop.org
… and future prospects of the research and development on gallium oxide (Ga 2 O 3) power
devices. … in the research and development on fundamental technologies of Ga 2 O 3 devices, …
devices. … in the research and development on fundamental technologies of Ga 2 O 3 devices, …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
… This article focuses on reviewing the recent progress of E-mode Ga2O3 MOSFETs, … It
is worth noting that only β-Ga2O3 could be grown by melt growth technologies because …
is worth noting that only β-Ga2O3 could be grown by melt growth technologies because …
A Simulation Approach for Depletion and Enhancement Mode in β-Ga2O3 MOSFET
P Kachhawa, N Chaturvedi - IETE Technical Review, 2022 - Taylor & Francis
… TCAD simulation of beta-gallium oxide (β-Ga 2 O 3 ) MOSFET with the channel … gallium
oxide material and technology are in R&D mode, it will become cost-effective as the technology …
oxide material and technology are in R&D mode, it will become cost-effective as the technology …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
… epitaxial growth technology behind the success of vertical Ga2O3 devices in Section II, we
discuss current aperture vertical Ga2O3 MOSFETs and vertical Ga2O3 fin-channel MOSFETs (…
discuss current aperture vertical Ga2O3 MOSFETs and vertical Ga2O3 fin-channel MOSFETs (…
Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices
… The higher breakdown strength compared to established technologies based on SiC or …
oxide semiconductor field-effect transistors (MOSFETs) have already demonstrated the high …
oxide semiconductor field-effect transistors (MOSFETs) have already demonstrated the high …
Realizing high-performance β-Ga₂O₃ MOSFET by using variation of lateral doping: a TCAD study
… Ga2O3 suffers from a low thermal conductivity [24], [25]. However, few work focuses on
manipulation of the doping profile in the channel of β-Ga2O3 MOSFET … β-Ga2O3 MOSFET with a …
manipulation of the doping profile in the channel of β-Ga2O3 MOSFET … β-Ga2O3 MOSFET with a …
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