The dependences of critical current on the temperature and magnetic field and the current-voltage
characteristics in response to incident microwave radiation are measured in the …

It is necessary to understand chemical bond nature of constituent elements on surfaces of Al
alloy and Al 2 O 3 single crystals for the fabrication of electronic devices and the advanced …

Static characteristics of amorphous-silicon field-effect transistors have been analyzed under
the assumption that the localized state density distribution (LSDD) in amorphous-silicon with …

A hypothesis based on the model that explains the resistance change effect of resistive
random access memory by redox reaction is proposed. This hypothesis leads to the conclusion …

Background Although the anti-inflammatory effects of immunomodulating diets (IMDs) have
recently attracted attention, the efficacy of enteral feeding of such diets after radical surgery …

Background As the techniques of laparoscopic surgery have improved, various institutions
have performed laparoscopic gastrectomies with regional lymph node dissection, as well as …

With increasing density of memory devices, the issue of generating soft errors by cosmic
rays is becoming more and more serious. Therefore, the irradiation resistance of resistance …

Large variation in basic memory properties is a serious issue that hinders the practical use of
ReRAMs. This study revealed that one of the main factors causing variation is the presence …

The well-defined clean surface in the 80K-phase Bi-Sr-Ca-Cu-O single crystal was obtained
by cleaving it in air and heating it at 350 C in ultrahigh vacuum (UHV). The low-energy …

We clarified that the resistive switching phenomenon in transition metal oxides occurs via a
redox reaction and that, in a broad sense, the phenomenon is not restricted to oxygen …