1,200-V IGBTs Offer Low-Loss Characteristics with High Short-Circuit Tolerance

A new series of automotive-grade, AEC-Q101-qualified 1,200-V IGBTs developed by ROHM Semiconductor offers both low loss characteristics and high short-circuit resistance. Intended for applications that include a vehicle's electric compressors, HV heaters, and industrial inverters, the first four devices in the series (RGA80TRX2HR, RGA80TRX2EHR, RGA80TSX2HR, RGA80TSX2EHR) are available in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants (SG84xxWN).

These high-voltage, medium-power IGBTs were developed in response to increasing use of higher supply voltages in automotive systems and industrial equipment. They also address the need to minimize energy losses, especially in electric vehicles (EVs). As a result, the new IGBTs enable designers to develop energy-efficient motor-driven subsystems as well as inverter and heater circuits that comply with strict automotive reliability and safety standards.

Thanks to a novel IGBT device structure and a new packaging options, the 1,200-V devices achieve a short-circuit withstand time of 10 µs (T_j = 25°C) and low switching and conduction losses, while maintaining a high withstand voltage of 1,200 V.

The devices are housed in the new TO-247-4L package style, which features four terminals and can accommodate an effective voltage of 1,100 V in a "Pollution Degree 2 environment." The packages’ wider pin spacing ensures adequate creepage distance between pins, making it possible to support higher-voltage applications than conventional products.