Abstract: A 45nm BiCMOS process, based on PDSOI CMOS, with SiGe HBT NPNs having {f_{T}f_{\max}\,=\,375/510GHz} is presented. The bipolars are integrated on ...
A 45nm BiCMOS process, based on PDSOI CMOS, with SiGe HBT NPNs having ${f_{T}f_{\max}\,=\,375/510GHz}$ is presented, the first time a high performance SiGe ...
... A 45nm PDSOI BiCMOS process has been presented with SiGe NPN HBTs having fT of 380GHz and fMAX of 550GHz, improving upon previously reported results (7) .
Abstract—A 45nm BiCMOS process, based on PDSOI CMOS, with SiGe HBT NPNs having fT/fMAX = 375/510GHz is presented. The bipolars are integrated on a PDSOI ...
Crystal Kenney's 5 research works with 14 citations, including: 415/610GHz f T /f MAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process.
SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS. ... Design automation methodology and rf/analog modeling for rf CMOS and SiGe ...
SiGe HBTs with ${f_{T}/f_{\max}\,\sim\,375/510GHz}$ Integrated in 45nm PDSOI CMOS ... A 45nm BiCMOS process, based on PDSOI CMOS, with SiGe HBT NPNs having ...
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication ... SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS.
SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS. ... fT SiGe technology. IEEE J. Solid State Circuits 37(9): 1106-1114 ...
A 45nm BiCMOS process, based on PDSOI CMOS, with SiGe HBT NPNs having ${f_{T}f_{\max}\,=\,375/510... more ...