Common Emitter Transistor Characteristics
Common Emitter Transistor Characteristics
Common Emitter Transistor Characteristics
A 2. i m :
To calculate the input dynamic resistance from the input characteristics and output dynamic resistance and current gain from the output characteristics of the given transistor.
Apparatus Required:
S.No Name of the Equipment/Component Transistor (BC 107) Specifications Icmax=100mA PD=300mw Vceo=45V Vbeo=50V Power rating=0.5w Carbon type 0-30V,1A Quantity
2 3
1 1
4 5
1 1
Theory:
In common emitter configuration the emitter is is common to both input and output. For operation the Base-Emitter junction normal forward
biased and base- collector junction is reveres biased .The input characteristics are plotted between IB and VBE biased t h e f o r m u l a ri = VBE / IB at constant VCE keeping diode. the The voltage input VCE dynamic constant. This is
The output characteristics are plotted between IC and VCE keeping IB constant. These curves are almost horizontal. The output dynamic resistance is given by, ro = VCE / IC at constant IB At a given operating point, we define DC and AC current gains (beta) as follows DC current gain dc = IC / IB VCE at constant
at constant VCE.
Circuit diagram:
Procedure:
a) Input Characteristics:
1. Connect the circuit as shown in fig A. 2. Keep the voltage VCE as constant at 2V by varying VCC. 3. Vary the input voltage, VBB in steps of 1V up to 10V 4. Measure the voltage, VBE from voltmeter and current, IB through the ammeter for different values of input voltages 5. Repeat the step 3 and 4 for VCE values of 5V and 10V 6. Draw input static characteristics for tabulated values 7. At suitable operating point, calculate input dynamic resistance.
b) Output Characteristics:
1. Fix input base current, IB at constant value say at 10A. 2. Vary the output voltage, VCC in steps of 1V from 0V up to10V. 3. Measure the voltage, VCE from voltmeter and current IC through the ammeter for different values. 4. Repeat above steps 2and 3 for various values of IB=20A and 30A. 5. Draw output static characteristics for tabulated values
Tabular forms:
a) Input Characteristics:
Applied S.No 1 2 3 4 5 6 7 8 9 10 Voltage VBB(V) 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 VCE = 2V VBE(V) 0 0.258 0.461 0.562 0.609 0.625 0.648 0.654 0.669 0.690 IB(A) 0 0 35 60 90 110 140 160 190 210 VCE = 5V VBE(V) 0 0.279 0.460 0.620 0.629 0.670 0.679 0.681 0.684 0.689 IB(A) 0 0 45 60 90 110 140 160 185 210 VCE = 10V VBE(V) 0 0.231 0.474 0.592 0.620 0.662 0.682 0.692 0.724 0.726 IB(A) 0 0 40 60 90 110 140 160 190 218
b) Output Characteristics:
S. No Applied voltage Vcc (V) 0 0.2 0.4 0.6 0.7 0.8 1.0 2.0 3.0 4.0 5.0 IB = 10A VCE(V) IC(mA) IB = 20A VCE (V) IC(mA) IB = 30A VCE (V) IC(mA)
1 2 3 4 5 6 7 8 9 10 11
0 0.02 0.06 0.08 0.1 0.12 0.21 0.31 0.51 0.68 0.88
0 0.02 0.05 0.08 0.09 0.1 0.15 0.18 0.29 0.34 0.49
0 0.02 0.04 0.05 0.06 0.07 0.12 0.17 0.28 0.33 0.39
Model graphs:
Calculations:
a) Input Characteristics:
Input Resistance, ri = VBE / IB at VCE constant = (0.654-0.647) / (90-30) X 10 = 116.
-6
b) Output Characteristics:
Output dynamic resistance, ro = VCE / IC at IB constant = (0.9-0.15) / (9.25-7.2) X10 = 365.85. Current gain, = IC / IB
-3 -3
at VCE constant
-6
Precautions:
1. Connections must be done very carefully. 2. Readings should be noted without parallax error. 3. The applied voltage, current should not exceed the maximum rating of the given transistor.
Result:
Input and output characteristics are observed for the given transistor in common emitter configuration. The input resistance, output resistance and the current gain are calculated.
Inference:
It is observed from the input characteristics that as VCE increases, the curves are