N-Channel Dual JFET: Corporation
N-Channel Dual JFET: Corporation
N-Channel Dual JFET: Corporation
CORPORATION
U421 U426
FEATURES DESCRIPTION The Calogic U421 Series are Dual N-Channel JFETs on a monolithic structure designed specifically for very high input impedance for differential amplification and impedance matching. This series features ultra low input bias current (250 fempto amps, U421) while offering high gain at low operating currents and tight matching characteristics. These devices are available in chip form for hybrid designs as well as a hermetic TO-78 package. ORDERING INFORMATION Part Package Temperature Range U421-U426 TO-78 Hermetic Package -55oC to +150oC XU421-U426 Sorted Chips in Carriers -55oC to +150oC
Ultra Low Input Bias Current . . . . . . . 250 Fempto Amps Low Operating Current Tight Matching Characteristics
Low Leakage FET Input Op Amps Ultra Electrometer Infrared Detectors pH Meters
APPLICATIONS
PIN CONFIGURATION
TO-78
1 2 3 4 5 6 7
4 5 3 2 1
6 7
BOTTOM VIEW
C S2 G1 D2 D1 G2 S1
CJ4
U421 U426
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-to-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Device Dissipation (Each Side), TA = 25oC (Derate 3.2 mW/ oC to 150oC) . . . . . . . . . . . . . . 400mW ELECTRICAL (25oC Unless otherwise noted) noted) ELECTRICAL CHARACTERISTICS CHARACTERISTICS (25oC unless otherwise
SYMBOL STATIC BVGSS BVG1G2 IGSS Gate-Source Breakdown Voltage Gate-Gate Breakdown Voltage Gate Reverse Current
(1)
Total Device Dissipation, TA = 25oC (Derate 6.0 mW/ oC to 150oC) . . . . . . . . . . . . . 750 mW Storage Temperature Range . . . . . . . . . . . . . -65oC to +150oC
CHARACTERISTIC
U421-3 MIN -40 40 1.0 1.0 TYP MAX -60 MIN -40 40
UNIT
TEST CONDITIONS
IG = -1A, VDS = 0 IG = -1A, ID = 0, IS = 0 T = +25oC T = +125 oC T = +25oC T = +125 oC VGS = -20V, VDS = 0 VDG = 10V, ID = 30A
IG VGS (off) VGS IDSS DYNAMIC gfs gos Ciss Crss gfs gos en NF
(1)
.25 .250
-0.4
-2.0 -1.8
-0.4
-2.0 -2.9
V A
60
1000
60
1800
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Forward Transconductance Common-Source Output Conductance Equivalent Short Circuit Input Noise Figure
300
300
f = 1 kHz
f = 1MHz
120
120
SYMBOL MATCH
CHARACTERISTIC
U421,4
U422,5
U423,6
UNIT
TEST CONDITIONS
| VGS1-VGS2 | Differential Gate-Source Voltage | VGS1-VGS2 | Differential Gate-Source Voltage Change with Temperature (2) T CMRR Common Mode Rejection Ratio (3)
mV V/ oC dB
VDG = 10V, ID = 30 A VDG = 10V, ID = 30A, TA = -55oC, TB = 25oC, TC = 125oC ID = 30A, VDG = 10 to 20 V
NOTES: 1. Approximately doubles for every 10oC increase in TA. 2. Measured at endpoints TA, TB and TC.
3. CMRR = 20log 10
[VGS1DD -VGS2 ]
VDD = 10V.