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    2sb1647e MP1620

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    Andres Alegria
    This document provides specifications and characteristics for a Darlington transistor (2SB1647). It lists absolute maximum ratings, electrical characteristics, equivalent circuit diagram, external dimensions, typical switching characteristics, and graphs of collector current vs collector-emitter voltage, current gain vs collector current, and power dissipation derating with temperature. The transistor is a silicon PNP epitaxial planar type for uses such as audio, series regulators, and general purposes.

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    Download as PDF, TXT or read online from Scribd

    2sb1647e MP1620

    Uploaded by

    Andres Alegria
    123 views1 page
    This document provides specifications and characteristics for a Darlington transistor (2SB1647). It lists absolute maximum ratings, electrical characteristics, equivalent circuit diagram, external dimensions, typical switching characteristics, and graphs of collector current vs collector-emitter voltage, current gain vs collector current, and power dissipation derating with temperature. The transistor is a silicon PNP epitaxial planar type for uses such as audio, series regulators, and general purposes.

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    2sb1647e MP1620

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    This document provides specifications and characteristics for a Darlington transistor (2SB1647). It lists absolute maximum ratings, electrical characteristics, equivalent circuit diagram, external dimensions, typical switching characteristics, and graphs of collector current vs collector-emitter voltage, current gain vs collector current, and power dissipation derating with temperature. The transistor is a silicon PNP epitaxial planar type for uses such as audio, series regulators, and general purposes.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    123 views1 page

    2sb1647e MP1620

    Uploaded by

    Andres Alegria
    This document provides specifications and characteristics for a Darlington transistor (2SB1647). It lists absolute maximum ratings, electrical characteristics, equivalent circuit diagram, external dimensions, typical switching characteristics, and graphs of collector current vs collector-emitter voltage, current gain vs collector current, and power dissipation derating with temperature. The transistor is a silicon PNP epitaxial planar type for uses such as audio, series regulators, and general purposes.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    (7 0 ) E

    Darlington
    IAbsolute maximum ratings (Ta=25C)
    Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 15 1 130(Tc=25C) 150 55 to +150 Unit V V V A A W C C

    2SB1647
    IElectrical Characteristics
    Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=2A VCB=10V, f=1MHz Ratings 100max 100max 150min 5000min 2.5max 3.0max 45typ 320typ V V MHz pF
    20.0min 4.0max 2 3

    Equivalent circuit

    Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560)

    Application : Audio, Series Regulator and General Purpose


    (Ta=25C) Unit
    5.00.2 2.0 1.8

    External Dimensions MT-100(TO3P)


    15.60.4 9.6 4.80.2 2.00.1

    A A
    19.90.3

    4.0

    a b

    3.20.1

    hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

    1.05 +0.2 -0.1 5.450.1 B C E 5.450.1

    0.65 +0.2 -0.1 1.4

    ITypical Switching Characteristics (Common Emitter)


    VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 10 IB2 (mA) 10 ton (s) 0.7typ tstg (s) 1.6typ tf (s) 1.1typ

    Weight : Approx 6.0g a. Part No. b. Lot No.

    I C V CE Characteristics (Typical)
    15
    2 m A
    1.5mA

    V CE ( sat ) I B Characteristics (Typical)


    Collector-Emitter Saturation Voltage V C E (s at) (V) 3

    I C V BE Temperature Characteristics (Typical)


    15 (V C E =4V)

    50mA 10mA 3mA

    1 .0m A

    Collector Current I C (A)

    0.8 mA

    Collector Current I C (A)

    10
    0. 5m A

    10
    p) Tem

    I C =15A

    emp se T (Ca

    I C =1 0A
    I C =5A

    (Ca

    125

    25C

    0 0.2

    0.5 1

    10

    50 100 200

    30

    C (

    Cas

    e Te

    I B =0.3mA

    mp)

    se

    Collector-Emitter Voltage V C E (V)

    Base Current I B (mA)

    Base-Emittor Voltage V B E (V)

    50,000 DC C urrent G ain h FE

    (V C E =4V) 50000 DC C urrent G ain h FE 125C 25C 10000 5000 30C

    (V C E =4V)

    j- a ( C/ W)

    h FE I C Characteristics (Typical)

    h FE I C Temperature Characteristics (Typical)

    j-a t Characteristics
    3

    Typ

    Transient Thermal Resistance

    10,000 5,000

    0.5

    1,000 0.2

    0.5

    1 Collector Current I C (A)

    10 15

    1000 0.2

    0.5

    1 Collector Current I C (A)

    10 15

    0.1

    10

    100 Time t(ms)

    1000 2000

    f T I E Characteristics (Typical)
    (V C E =12V) 60

    Safe Operating Area (Single Pulse)


    50
    10

    P c T a Derating
    130

    10

    Cut -off Fre quen cy f T (MH Z )

    10 40 Collect or Cur ren t I C ( A) 5

    0m

    DC

    M aximum Po wer Dissipat io n P C (W)

    100

    W ith In fin ite he at si nk

    1 0.5 Without Heatsink Natural Cooling

    50

    20

    0.1 0 0.02 0.05 0.1 0.5 1 5 10 0.05 3 5 10 50 100 200 3.5 0 0

    Without Heatsink 25 50 75 100 125 150

    Emitter Current I E (A)

    Collector-Emitter Voltage V C E (V)

    Ambient Temperature Ta(C)

    52

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