LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

LF353-N
www.ti.com
SNOSBH3F APRIL 1998 REVISED MARCH 2013
LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

Check for Samples: LF353-N
FEATURES
DESCRIPTION
These devices are low cost, high speed, dual JFET

input operational amplifiers with an internally trimmed
input offset voltage (BI-FET II technology). They
require low supply current yet maintain a large gain
bandwidth product and fast slew rate. In addition, well
matched high voltage JFET input devices provide
very low input bias and offset currents. The LF353-N
is pin compatible with the standard LM1558 allowing
designers to immediately upgrade the overall
performance of existing LM1558 and LM358 designs.
Internally Trimmed Offset Voltage: 10 mV

Low Input Bias Current: 50pA
Low Input Noise Voltage: 25 nV/Hz
Low Input Noise Current: 0.01 pA/Hz
Wide Gain Bandwidth: 4 MHz
High Slew Rate: 13 V/s
Low Supply Current: 3.6 mA
High Input Impedance: 1012
Low Total Harmonic Distortion : 0.02%
Low 1/f Noise Corner: 50 Hz
Fast Settling Time to 0.01%: 2 s
These amplifiers may be used in applications such as

high speed integrators, fast D/A converters, sample
and hold circuits and many other circuits requiring low
input offset voltage, low input bias current, high input
impedance, high slew rate and wide bandwidth. The
devices also exhibit low noise and offset voltage drift.
Typical Connection
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright 19982013, Texas Instruments Incorporated
LF353-N
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Simplified Schematic
Figure 1. 1/2 Dual
Dual-In-Line Package
Top View
Figure 2. 8-Pin SOIC (See D Package)

8-Pin PDIP (See P Package)
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)

Supply Voltage
18V
See (3)
Power Dissipation
Operating Temperature Range
0C to +70C
Tj(MAX)
150C
Differential Input Voltage
30V
Input Voltage Range (4)
15V
Output Short Circuit Duration
Continuous
Storage Temperature Range
65C to +150C
Lead Temp. (Soldering, 10 sec.)
260C
Soldering Information: Dual-In-Line Package Soldering (10 sec.)
260C
Small Outline Package
215C
Vapor Phase (60 sec.)

Infrared (15 sec.)
220C
ESD Tolerance (5)
1000V
JA D Package
(1)
(2)
(3)
(4)
(5)
TBD
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115C/W typ junction to ambient
for the P package, and 160C/W typ junction to ambient for the D package.
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Human body model, 1.5 k in series with 100 pF.
LF353-N
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DC Electrical Characteristics
Symbol
VOS
Parameter
Input Offset Voltage
LF353-N
Conditions
MIn
Typ
Max
RS=10k, TA=25C
Over Temperature
10
13
VOS/T
Average TC of Input Offset Voltage
RS=10 k
10
IOS
Input Offset Current
Tj=25C (1) (2)
25
Tj70C
Tj=25C (1) (2)
IB
Input Bias Current
RIN
Input Resistance
Tj=25C
AVOL
Large Signal Voltage Gain
VS=15V, TA=25C
50
Tj70C
25
Units
mV
mV
V/C
100
pA
nA
200
pA
nA
1012
100
V/mV
VO=10V, RL=2 k
Over Temperature
15
VO
Output Voltage Swing
VS=15V, RL=10k
12
13.5
V/mV
V
VCM
Input Common-Mode Voltage
VS=15V
11
+15
12
CMRR
Common-Mode Rejection Ratio
RS 10k
70
100
dB
PSRR
Supply Voltage Rejection Ratio
See (3)
70
100
dB
IS
Supply Current
Range
3.6
6.5
mA
These specifications apply for VS=15V and 0CTA+70C. VOS, IBand IOS are measured at VCM=0.
The input bias currents are junction leakage currents which approximately double for every 10C increase in the junction temperature,
Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation
the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+jA PD where jA is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with
common practice. VS = 6V to 15V.
(1)
(2)
(3)
AC Electrical Characteristics (1)

Symbol
Parameter
LF353-N
Conditions
Min
Amplifier to Amplifier Coupling
TA=25C, f=1 Hz20 kHz

(Input Referred)
SR
Slew Rate
VS=15V, TA=25C
8.0
GBW
Gain Bandwidth Product
VS=15V, TA=25C
2.7
en
Equivalent Input Noise Voltage
TA=25C, RS=100, f=1000 Hz
in
Equivalent Input Noise Current
THD
Total Harmonic Distortion
(1)
Typ
Max
Units
120
dB
13
V/s
MHz
16
nV/Hz
Tj=25C, f=1000 Hz
0.01
pA/Hz
AV=+10, RL=10k, VO=20Vpp,

BW=20 Hz-20 kHz
<0.02
These specifications apply for VS=15V and 0CTA+70C. VOS, IBand IOS are measured at VCM=0.
LF353-N
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Typical Performance Characteristics

Input Bias Current
Input Bias Current
Figure 3.
Figure 4.
Supply Current
Positive Common-Mode Input Voltage Limit
Figure 5.
Figure 6.
Negative Common-Mode Input Voltage Limit
Positive Current Limit
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
Negative Current Limit
Voltage Swing
Figure 9.
Figure 10.
Output Voltage Swing
Gain Bandwidth
Figure 11.
Figure 12.
Bode Plot
Slew Rate
Figure 13.
Figure 14.
LF353-N
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Distortion
vs.
Frequency
Undistorted Output Voltage Swing
Figure 15.
Figure 16.
Open Loop Frequency Response
Common-Mode Rejection Ratio
Figure 17.
Figure 18.
Power Supply Rejection Ratio
Equivalent Input Noise Voltage
Figure 19.
Figure 20.
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Open Loop Voltage Gain (V/V)
Output Impedance
Figure 21.
Figure 22.
Inverter Settling Time
Figure 23.
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Pulse Response
Figure 24. Small Signaling Inverting
Figure 25. Large Signal Inverting
Figure 26. Small Signal Non-Inverting
Figure 27. Large Signal Non-Inverting
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Figure 28. Current Limit (RL = 100)
10
LF353-N
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APPLICATION HINTS
These devices are op amps with an internally trimmed input offset voltage and JFET input devices (BI-FET II).
These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for
clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large
increase in input current. The maximum differential input voltage is independent of the supply voltages. However,
neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to
flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will force the output to a high state, potentially
causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force
the amplifier output to a high state. In neither case does a latch occur since raising the input back within the
common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if
both inputs exceed the limit, the output of the amplifier will be forced to a high state.
The amplifiers will operate with a common-mode input voltage equal to the positive supply; however, the gain
bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings
to within 3V of the negative supply, an increase in input offset voltage may occur.
Each amplifier is individually biased by a zener reference which allows normal circuit operation on 6V power
supplies. Supply voltages less than these may result in lower gain bandwidth and slew rate.
The amplifiers will drive a 2 k load resistance to 10V over the full temperature range of 0C to +70C. If the
amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the
negative voltage swing and finally reach an active current limit on both positive and negative swings.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in
polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through
the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed
unit.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in
order to ensure stability. For example, resistors from the output to an input should be placed with the body close
to the input to minimize pick-up and maximize the frequency of the feedback pole by minimizing the
capacitance from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed
loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less
than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the
input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor
and the resistance it parallels is greater than or equal to the original feedback pole time constant.
11
LF353-N
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Detailed Schematic
12
LF353-N
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Typical Applications
Three-Band Active Tone Control
(1)
All controls flat.
(2)
Bass and treble boost, mid flat.
(3)
Bass and treble cut, mid flat.
(4)
Mid boost, bass and treble flat.
(5)
Mid cut, bass and treble flat.
All potentiometers are linear taper
Use the LF347 Quad for stereo applications
13
LF353-N
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Improved CMRR Instrumentation Amplifier
(1)
Fourth Order Low Pass Butterworth Filter
(2)
14
LF353-N
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Fourth Order High Pass Butterworth Filter
(3)
Ohms-to-Volts Converter
(4)
15
LF353-N
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REVISION HISTORY
Changes from Revision E (March 2013) to Revision F
16
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 15
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SNOSBH3F APRIL 1998 REVISED MARCH 2013