Triple Junction GaAs
Triple Junction GaAs
This cell type is a GaInP/GaAs/Ge on Ge substrate triple junction solar cell (efficiency
class 30%). The cell is equipped with an integrated by-pass diode, which protects the
adjacent cell in the string.
Electrical Data
BOL 5E14 1E15 3E15
Average Open Circuit VOC [mV] 2669 0.94 0.92 0.89
Average Short Circuit ISC [mA] 525 0.99 0.96 0.87
Voltage at max. Power Vpmax [mV] 2379 0.93 0.91 0.88
Current at max. Power Ipmax [mA] 505 0.98 0.95 0.86
Average Efficiency ŋbare [%] 29.1 0.91 0.87 0.76
Acceptance Values
Voltage Vop 2300 mV
min. average current @ Vop Iop avg 510 mA
Temperature Gradients
BOL 5E14 1E15
Open Circuit Voltage dVoc /dT [mV/°C] - 6.0 - 6.2 - 6.3
Short Circuit Current dIsc /dT [mA/°C] 0.32 0.31 0.39
Voltage at max. Power dVmp /dT [mV/°C] - 6.1 - 6.3 - 6.4
Current at max. Power dImp /dT [mA/°C] 0.28 0.20 0.29
Threshold Values
Absorptivity ≤ 0.91 (with CMX 100 AR)
Pull test > 1.6 N at 45° welding test (with 12.5 µm Ag stripes)
Development Status Qualified