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Triple Junction GaAs

This document summarizes the specifications of a 30% triple junction GaAs solar cell. The cell uses a GaInP/GaAs/Ge substrate and has a cell area of 30.18 cm2. It has an average efficiency of 29.1% initially that degrades over time with exposure but remains above 0.76% after high radiation. Key electrical data at various radiation exposures are provided along with temperature coefficients and qualification test results.
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0% found this document useful (0 votes)
369 views

Triple Junction GaAs

This document summarizes the specifications of a 30% triple junction GaAs solar cell. The cell uses a GaInP/GaAs/Ge substrate and has a cell area of 30.18 cm2. It has an average efficiency of 29.1% initially that degrades over time with exposure but remains above 0.76% after high radiation. Key electrical data at various radiation exposures are provided along with temperature coefficients and qualification test results.
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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30% Triple Junction GaAs Solar Cell

Type: TJ Solar Cell 3G30C

This cell type is a GaInP/GaAs/Ge on Ge substrate triple junction solar cell (efficiency
class 30%). The cell is equipped with an integrated by-pass diode, which protects the
adjacent cell in the string.

Drawing and picture not to scale (dimensions in mm) www.azurspace.com


30% Triple Junction GaAs Solar Cell
Type: TJ Solar Cell 3G30C
Design and Mechanical Data
Base Material GaInP/GaAs/Ge on Ge substrate
AR-coating TiOx/Al2O3
Dimensions 40 x 80 mm ± 0.1 mm
Cell Area 30.18 cm2
Average Weight ≤ 86 mg/cm2
Thickness 150 ± 20 µm
Contact Metallization Thickness (Ag/Au) 4 – 10 µm
Grid Design Grid system with 3 contact pads
Integrated Protection Diode Vforward (605 mA) ≤ 2.5 V
Ireverse (2.8 V) ≤ 100 µA @ T = 25°C

Electrical Data
BOL 5E14 1E15 3E15
Average Open Circuit VOC [mV] 2669 0.94 0.92 0.89
Average Short Circuit ISC [mA] 525 0.99 0.96 0.87
Voltage at max. Power Vpmax [mV] 2379 0.93 0.91 0.88
Current at max. Power Ipmax [mA] 505 0.98 0.95 0.86
Average Efficiency ŋbare [%] 29.1 0.91 0.87 0.76

Acceptance Values
Voltage Vop 2300 mV
min. average current @ Vop Iop avg 510 mA

HNR 0002830-00 RIX dated September 2009


min. individual current @ Vop Iop min 475 mA
Standard : CASOLBA 2005 ( 05-20MV1, etc) ; Cell Type: 3G-28%;
Spectrum: AMO WRC (1367 W/m² ) ; T = 28 °C

Temperature Gradients
BOL 5E14 1E15
Open Circuit Voltage dVoc /dT [mV/°C] - 6.0 - 6.2 - 6.3
Short Circuit Current dIsc /dT [mA/°C] 0.32 0.31 0.39
Voltage at max. Power dVmp /dT [mV/°C] - 6.1 - 6.3 - 6.4
Current at max. Power dImp /dT [mA/°C] 0.28 0.20 0.29

Threshold Values
Absorptivity ≤ 0.91 (with CMX 100 AR)
Pull test > 1.6 N at 45° welding test (with 12.5 µm Ag stripes)
Development Status Qualified

AZUR SPACE Solar Power GmbH · Theresienstr. 2 · 74072 Heilbronn


Phone: +49 7131 67-2603 · Fax: +49 7131 67-2727 · E-Mail: [email protected] www.azurspace.com

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