UTC S8050 NPN Epitaxial Silicon Transistor: Low Voltage High Current Small Signal NPN Transistor
UTC S8050 NPN Epitaxial Silicon Transistor: Low Voltage High Current Small Signal NPN Transistor
UTC S8050 NPN Epitaxial Silicon Transistor: Low Voltage High Current Small Signal NPN Transistor
FEATURES
*Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to S8550
TO-92
1:EMITTER
2:BASE
3: COLLECTOR
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
VALUE
30 20 5 1 700 150 -65 ~ +150
UNIT
V V V W mA C C
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob
TEST CONDITIONS
Ic=100A,IE=0 Ic=1mA,IB=0 IE=100A,Ic=0 VCB=30V,IE=0 VEB=5V,Ic=0 VCE=1V,Ic=1mA VCE=1V,Ic=150 mA VCE=1V,Ic=500mA Ic=500mA,IB=50mA Ic=500mA,IB=50mA VCE=1V,Ic=10mA VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz
MIN
30 20 5
TYP
MAX
UNIT
V V V A nA
1 100 100 120 40 110 400 0.5 1.2 1.0 100 9.0
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
V V V MHz pF
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
QW-R201-013,A
UTC S8050
RANK RANGE
CLASSIFICATION OF hFE2
VCE=1V
0.4
VCE=1V
1 10
2 10
0.3
IB=1.5mA
0.2
IB=1.0mA IB=0.5mA
1 10
0 10
0.1
0.4
0.8
1.2
1.6
2.0
0 10
-1 10
0 10
1 10
2 10
3 10
Collector-Emitter voltage ( V)
Ic=10*IB
VBE(sat)
3 10
VCE=10V
2 10
2 10
f=1MHz IE=0
2 10
1 10
1 10
VCE(sat)
1 10
-1 10
0 10
1 10
2 10
3 10
0 10 0 10
1 10
2 10
3 10
0 10
0 10
1 10
2 10
3 10
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
QW-R201-013,A