Nte 399

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NTE399

Silicon NPN Transistor


High Voltage Video Amp
(Compl to NTE2366)
Absolute Maximum Ratings:
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector Cutoff Current

ICBO

VCB = 200V, IE = 0

1.0

Emitter Cutoff Current

IEBO

VEB = 6V, IC = 0

1.0

DC Current Gain

hFE

VCE = 10V, IC = 5mA

100

220

VCB = 30V, IC = 10mA

50

MHz

Cob

VCB = 10V, f = 1MHz

7.5

pF

CollectorEmitter Saturation Voltage

VCE(sat)

IC = 20mA, IB = 2mA

0.6

BaseEmitter Saturation Voltage

VBE(sat)

IC = 20mA, IB = 2mA

1.0

Current GainBandwidth Product


Output Capacitance

fT

.339
(8.62)
Max
Seating Plane

.026 (.66)
Dia Max

.512
(13.0)
Min

E C B
.100 (2.54)

.200
(5.08)
Max

.240 (6.09) Max

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