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    Nte 399

    Uploaded by

    Carlos Vladimir Borjas
    This document provides specifications for an NTE399 silicon NPN transistor intended for use in high voltage video amplifiers. It lists the transistor's absolute maximum ratings, such as supporting collector-emitter voltages up to 300V and collector currents up to 100mA continuous or 300mA peak. The document also provides the transistor's typical electrical characteristics, such as a current gain of 100-220 and an output capacitance below 7.5pF.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Nte 399

    Uploaded by

    Carlos Vladimir Borjas
    18 views2 pages
    This document provides specifications for an NTE399 silicon NPN transistor intended for use in high voltage video amplifiers. It lists the transistor's absolute maximum ratings, such as supporting collector-emitter voltages up to 300V and collector currents up to 100mA continuous or 300mA peak. The document also provides the transistor's typical electrical characteristics, such as a current gain of 100-220 and an output capacitance below 7.5pF.

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    nte399

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    This document provides specifications for an NTE399 silicon NPN transistor intended for use in high voltage video amplifiers. It lists the transistor's absolute maximum ratings, such as supporting collector-emitter voltages up to 300V and collector currents up to 100mA continuous or 300mA peak. The document also provides the transistor's typical electrical characteristics, such as a current gain of 100-220 and an output capacitance below 7.5pF.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views2 pages

    Nte 399

    Uploaded by

    Carlos Vladimir Borjas
    This document provides specifications for an NTE399 silicon NPN transistor intended for use in high voltage video amplifiers. It lists the transistor's absolute maximum ratings, such as supporting collector-emitter voltages up to 300V and collector currents up to 100mA continuous or 300mA peak. The document also provides the transistor's typical electrical characteristics, such as a current gain of 100-220 and an output capacitance below 7.5pF.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    NTE399

    Silicon NPN Transistor


    High Voltage Video Amp
    (Compl to NTE2366)
    Absolute Maximum Ratings:
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
    Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter

    Symbol

    Test Conditions

    Min

    Typ

    Max

    Unit

    Collector Cutoff Current

    ICBO

    VCB = 200V, IE = 0

    1.0

    Emitter Cutoff Current

    IEBO

    VEB = 6V, IC = 0

    1.0

    DC Current Gain

    hFE

    VCE = 10V, IC = 5mA

    100

    220

    VCB = 30V, IC = 10mA

    50

    MHz

    Cob

    VCB = 10V, f = 1MHz

    7.5

    pF

    CollectorEmitter Saturation Voltage

    VCE(sat)

    IC = 20mA, IB = 2mA

    0.6

    BaseEmitter Saturation Voltage

    VBE(sat)

    IC = 20mA, IB = 2mA

    1.0

    Current GainBandwidth Product


    Output Capacitance

    fT

    .339
    (8.62)
    Max
    Seating Plane

    .026 (.66)
    Dia Max

    .512
    (13.0)
    Min

    E C B
    .100 (2.54)

    .200
    (5.08)
    Max

    .240 (6.09) Max

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