Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts A
Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = 40 to 125C) 2N6394 2N6395 2N6397 2N6398 2N6399 RMS OnState Current (TC = 90C) (All Conduction Angles) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125C) Circuit Fusing (t = 8.3 ms) Forward Peak Power Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.5 2 40 to +125 40 to +150 Amps Amps A2s Watts Watt Amps C C Value Unit Volts
THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol RJC
Max 2
Unit C/W
REV 1
Motorola Thyristor Device Data Motorola, Inc. 1999
2N6394 thru 2N6399
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C * Forward On Voltage (ITM = 24 A Peak) * Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) * Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) (VD = Rated VDRM, RL = 100 Ohms, TJ = 125C) * Holding Current (VD = 12 Vdc, Gate Open) Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) Turn-Off Time (VD = Rated VDRM) (ITM = 12 A, IR = 12 A) (ITM = 12 A, IR = 12 A, TJ = 125C) Critical RateofRise of Off-State Voltage Exponential (VD = Rated VDRM, TJ = 125C) *Indicates JEDEC Registered Data. Symbol IDRM, IRRM VTM IGT VGT VGD IH tgt tq dv/dt 15 35 50 V/s 1.7 5 10 2 2.2 30 Min Typ Max Unit A mA Volts mA Volts 0.2 0.7 6 1 1.5 40 2 mA s s
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
FIGURE 1 CURRENT DERATING
130
FIGURE 2 MAXIMUM ON-STATE POWER DISSIPATION
20 P(AV) , AVERAGE POWER (WATTS) 18 16 14 12 10 8.0 6.0 4.0 2.0 0 8.0 0 1.0 2.0 3.0 7.0 4.0 5.0 6.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 8.0 TJ 125C = CONDUCTION ANGLE = 30 60 180 90 dc
1.1 VGT, GATE TRIGGER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 60 40 3.0 20 0 20 40 60 80 100 120 140 60 40 OFF-STATE VOLTAGE = 12 V IH , HOLDING CURRENT (mA) 30
FIGURE 9 HOLDING CURRENT
OFF-STATE VOLTAGE = 12 V 20
10 7.0 5.0
20
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Motorola Thyristor Device Data
2N6394 thru 2N6399
PACKAGE DIMENSIONS
T B F C
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04
Q 1 2 3
A U K
H Z L V G D N J R
STYLE 3: PIN 1. 2. 3. 4.
CATHODE ANODE GATE ANODE
CASE 221A07 ISSUE Z
Motorola Thyristor Device Data
2N6394 thru 2N6399
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Motorola Thyristor Device Data 2N6394/D
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